jun-27-2003 1 bar63... silicon pin diodes pin diode for high speed switching of rf signals very low forward resistance (low insertion loss) very low capacitance (high isolation) for frequencies up to 3ghz bar63-02.. bar63-03w bar63-07l4 bar63-04 bar63-04w bar63-06 bar63-06w bar63-05 bar63-05w type package configuration l s (nh) marking bar63-02l* BAR63-02V bar63-02w bar63-03w bar63-04 bar63-04w bar63-05 bar63-05w bar63-06 bar63-06w bar63-07l4* tslp-2-1 sc79 scd80 sod323 sot23 sot323 sot23 sot323 sot23 sot323 tslp-4-4 single, leadless single single single series series common cathode common cathode common anode common anode parallel pair, leadless 0.4 0.6 0.6 1.8 1.8 1.4 1.8 1.4 1.8 1.4 0.4 g g gg g g4s g4s g5s g5s g6s g6s p3s * preliminary data
jun-27-2003 2 bar63... maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 50 v forward current i f 100 ma total power dissipation bar63-02l, t s 118c BAR63-02V, -02w, bar63-03w, t s 115c bar63-04...bar63-06 , t s 55c bar63-04s , t s 115c bar63-04w...bar63-06w, t s 105c bar63-07l4 , t s tbd p tot 250 250 250 250 250 250 mw junction temperature t j 150 c operating temperature range t op -55 ... 125 storage temperature t stg -55 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) bar63-02l BAR63-02V, bar63-02w bar63-03w bar63-04...bar63-06 bar63-04s bar63-04w...bar63-06w bar63-07l4 r thjs 125 140 155 380 180 180 tbd k/w 1 for calculation of r thja please refer to the technical information
jun-27-2003 3 bar63... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br) 50 - - v reverse current v r = 35 v i r - - 10 na forward voltage i f = 100 ma v f - 0.95 1.2 v
jun-27-2003 4 bar63... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics diode capacitance v r = 5 v, f = 1 mhz v r = 0 v, 100 mhz ... 1.8 ghz c t - - 0.21 0.3 0.3 - pf reverse parallel resistance v r = 0 v, f = 100 mhz v r = 0 v, f = 1 ghz v r = 0 v, f = 1.8 ghz r p - - - 500 15 5 - - - k forward resistance i f = 5 ma, f = 100 mhz i f = 10 ma, f = 100 mhz r f - - 1.2 1 2 - charge carrier life time i f = 10 ma, i r = 6 ma, measured at i r = 3 ma, r l = 100 rr - 75 - ns i-region width w i - 4.5 - m insertion loss 1) i f = 1 ma, f = 1.8 ghz i f = 5 ma, f = 1.8 ghz i f = 10 ma, f = 1.8 ghz | s 21 | 2 - - - -0.15 -0.11 -0.1 - - - db isolation 1) v r = 0 v, f = 0.9 mhz v r = 0 v, f = 1.8 mhz v r = 0 v, f = 2.45 mhz | s 21 | 2 - - - -17.9 -12.3 -10 - - - 1 bar63-02l in series configuration, z = 50
jun-27-2003 5 bar63... diode capacitance c t = ( v r ) f = 1mhz - 1.8ghz v ehd07139 r t c 0 0v pf 0.1 0.2 0.3 0.4 0.5 10 20 30 reverse parallel resistance r p = ( v r ) f = parameter 0 5 10 15 20 v 30 v r -1 10 0 10 1 10 2 10 3 10 kohm r p 100 mhz 1 ghz 1.8 ghz forward resistance r f = ( i f ) f = 100mhz ehd07138 f f r ? 10 -2 -1 10 ma 10 -1 10 0 10 1 10 2 10 2 10 0 10 1 forward current i f = ( v f ) t a = parameter ma 0.3 f f ehd07171 v bar 63... 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.5 0.8 1 v 1.2 40 25 ?c 85 ?c ?c
jun-27-2003 6 bar63... forward current i f = ( t s ) bar63-04...bar63-06 0 15 30 45 60 75 90 105 120 c 150 t s 0 20 40 60 80 ma 120 i f forward current i f = ( t s ) BAR63-02V, bar63-02w 0 15 30 45 60 75 90 105 120 c 150 t s 0 20 40 60 80 ma 120 i f forward current i f = ( t s ) bar63-03w 0 15 30 45 60 75 90 105 120 c 150 t s 0 20 40 60 80 ma 120 i f forward current i f = ( t s ) bar63-04w...bar63-06w 0 15 30 45 60 75 90 105 120 c 150 t s 0 20 40 60 80 ma 120 i f
jun-27-2003 7 bar63... permissible puls load r thjs = ( t p ) bar63-04...bar63-06 t ehb07146 p 10 -6 10 -5 10 -4 10 -3 10 -2 s10 0 5 t t p d = t p t 10 0 1 10 2 10 d= 0.5 0.2 0.1 0.05 0.05 0.01 0.005 0 r thjs 5 5 k/w permissible pulse load i fmax / i fdc = ( t p ) bar63-04...bar63-06 t ehb07147 p f 10 -6 10 -5 10 -4 10 -3 10 -2 s10 0 t t p d = t p t 10 0 d= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 max dc f 1 10 5 5 10 2 permissible puls load r thjs = ( t p ) BAR63-02V, bar63-02w 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load i fmax / i fdc = ( t p ) BAR63-02V, bar63-02w 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
jun-27-2003 8 bar63... permissible pulse load i fmax / i fdc = ( t p ) bar63-03w 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ( t p ) bar63-03w 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load i fmax / i fdc = ( t p ) bar63-04w...bar63-06w 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ( t p ) bar63-04w...bar63-06w 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0
jun-27-2003 9 bar63... insertion loss |s 21 | 2 = ( f ) i f = parameter bar63-02l in series configuration, z = 50 0 1 2 3 4 ghz 6 f -0.4 -0.3 -0.2 db 0 insertion loss 1 ma 5 ma 10 ma isolation | s 21 | 2 = (f) v r = paramter bar63-02l in series configuration, z = 50 0 1 2 3 4 ghz 6 f -30 -25 -20 -15 -10 db 0 isolation 0 v 1 v 10 v
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